m58pr256j芯片解密与特性资料案例

来源：kaiyun平台官网登录 服务。以下是此次m58pr256j芯片技术特性简介：
M58PR256J Features
·Supply voltage
–VDD = 1.7 V to 2.0 V for program, erase and read
–VDDQ
= 1.7 V to 2.0 V for I/O buffers
–VPP = 9 V for fast program
·Synchronous / Asynchronous Read
– Synchronous Burst Read mode:108 MHz, 66 MHz
– Asynchronous Page Read mode
– Random access: 96 ns
·Programming time
– 4.2 μs typical Word program time using Buffer Enhanced Factory Program command
·Memory organization
– Multiple Bank Memory Array: 32 Mbit Banks (256 Mbit devices); 64 Mbit Banks (512 Mbit devices)
– Four Extended Flash Array (EFA) Blocks of 64 Kbits
·Dual operations
– program/erase in one Bank while read in others
– No delay between read and write operations
·Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked with zero latency
–WP for Block Lock-Down
– Absolute Write Protection with VPP = VSS
·Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
·Common Flash Interface (CFI)
·100,000 program/erase cycles per block
·Electronic signature
– Manufacturer Code: 20h
– 256 Mbit Device: 8818
– 512 Mbit Device: 8819
基于m58pr256j芯片的以上特点，如果您有此IC解密需求，欢迎来电来访咨询洽谈。